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Publications by P. Pochet

Erratum “Impact of Isovalent Doping on the Trapping of Vacancy and Interstitial Related Defects in Si” [J. Appl. Phys. 113, 113506 (2013)]

Journal of Applied Physics
AstronomyPhysics
2013English

Towards Sustainable Mobility Indicators: Application to the Lyons Conurbation

Transport Policy
DevelopmentPlanningTransportationLawGeography
2003English

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Erratum: “Narrow-Bandwidth Solar Upconversion: Case Studies of Existing Systems and Generalized Fundamental Limits” [J. Appl. Phys. 113, 124509 (2013)]

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Comment on “Planar Hall Resistance Ring Sensor Based on NiFe/Cu/IrMn Trilayer Structure” [J. Appl. Phys. 113, 063903 (2013)]

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Erratum: “The Low-Frequency Alternative-Current Magnetic Susceptibility and Electrical Properties of Si(100)/Fe40Pd40B20(X Å)/ZnO(500 Å) and Si(100)/ZnO(500 Å)/Fe40Pd40B20(Y Å) Systems” [J. Appl. Phys. 113, 17B303 (2013)]

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Response to “Comment on ‘Intrinsic Dielectric Frequency Dependent Spectrum of a Single Domain Tetragonal BaTiO3’” [J. Appl. Phys. 113, 126104 (2013)]

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Erratum: “Sexithiophene Films on Clean and Oxidized Si(111) Surfaces: Growth and Electronic Structure” [J. Appl. Phys. 96, 2716 (2004)]

Journal of Applied Physics
AstronomyPhysics
2005English

Erratum: “Identification of Divacancy and Silicon Vacancy Qubits in 6h-SiC” [Appl. Phys. Lett. 114, 112107 (2019)]

Applied Physics Letters
AstronomyPhysics
2020English

Comment on “Influence of the Doping Element on the Electron Mobility in N Silicon” [J. Appl. Phys. 83, 3096 (1998)]

Journal of Applied Physics
AstronomyPhysics
1999English

Effect of Excess Vacancy Concentration on as and Sb Doping in Si

Journal of Physics D: Applied Physics
SurfacesUltrasonicsCondensed Matter PhysicsAcousticsOpticalMagnetic MaterialsFilmsCoatingsElectronic
2009English

Erratum: “Effects of Holmium Substitution on Multiferroic Properties in Tb0.67Ho0.33MnO3” [Appl. Phys. Lett. 102, 062908 (2013)]

Applied Physics Letters
AstronomyPhysics
2014English

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