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Publications by P. Provencio

Microstructure of GaN Grown on (111) Si by MOCVD

MRS Internet Journal of Nitride Semiconductor Research
1999English

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InN Nano-Column Grown on Si (111) Substrate Using Au Catalyst by MOCVD

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Size- And Shape-Controlled GaN Nanocrystals Grown on Si(111) Substrate by Reactive Epitaxy

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Buffer Optimization for Crack-Free GaN Epitaxial Layers Grown on Si(1 1 1) Substrate by MOCVD

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Growth of Vertical GaN Nano-Column on Au Droplet/Si(111) Substrate Using Pulsed Flow MOCVD Method

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Temperature Dependence Studies of Er Optical Centers in GaN Epilayers Grown by MOCVD

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The Electrical, Optical, and Structural Properties of GaN Epitaxial Layers Grown on Si(111) Substrate With Interlayers

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Study on AlGaN/GaN Heterostructures Grown on Si Substrate

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Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy

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