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Publications by P. R. Hageman

Effect of the Misorientation of the 4h-SiC Substrate on the Open Volume Defects in GaN Grown by Metal-Organic Chemical Vapor Deposition

Applied Physics Letters
AstronomyPhysics
2006English

Effect of Growth Polarity on Vacancy Defect and Impurity Incorporation in Dislocation-Free GaN

Applied Physics Letters
AstronomyPhysics
2005English

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