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Publications by Paul A. Breddels

Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Related publications

Thin-Film Transistors: Top-Split-Gate Ambipolar Organic Thin-Film Transistors (Adv. Electron. Mater. 5/2018)

Advanced Electronic Materials

Magnetic Materials

English

Integration of Amorphous and Polycrystalline Silicon Thin-Film Transistors Through Selective Crystallization of Amorphous Silicon

Applied Physics Letters

English

Characteristics of Polycrystalline Silicon Thin-Film Transistors With Thin Oxide/Nitride Gate Structures

Optical Engineering

Molecular Physics,

English

Electronic Transport in Low Temperature Nanocrystalline Silicon Thin-Film Transistors Obtained by Hot-Wire CVD

Journal of Non-Crystalline Solids

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Stability Improvement of Deuterated Amorphous Silicon Thin-Film Transistors Characterized by Modified Schottky-Contact Gated-Four-Probe Method

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Nitrocellulose-Based Collodion Gate Insulator for Amorphous Indium Zinc Gallium Oxide Thin-Film Transistors

Journal of Information Display

Electronic Engineering

Materials Science

English

Positive Charge Trapping Phenomenon in N-Channel Thin-Film Transistors With Amorphous Alumina Gate Insulators

Journal of Applied Physics

English

In-Plane-Gate Flexible Single-Crystalline Silicon Thin-Film Transistors With High-K Gate Dielectrics on Plastic Substrates

English

Comparison of Different Processes in the Fabrication of Crystallized Amorphous Silicon Thin Film Transistors

English