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Publications by Paul R. Edwards

High Resolution Cathodoluminescence Hyperspectral Imaging of Surface Features in InGaN/GaN Multiple Quantum Well Structures

Applied Physics Letters

English

Investigation of Indium Gallium Nitride Facet-Dependent Nonpolar Growth Rates and Composition for Core–shell Light-Emitting Diodes

Journal of Nanophotonics

Condensed Matter Physics

Magnetic Materials

English

Related publications

Dependence of Carrier Localization in InGaN∕GaN Multiple-Quantum Wells on Well Thickness

Applied Physics Letters

English

Quantum Shift of Band-Edge Stimulated Emission in InGaN–GaN Multiple Quantum Well Light-Emitting Diodes

Applied Physics Letters

English

Mechanisms Preventing Trench Defect Formation in InGaN/GaN Quantum Well Structures Using Hydrogen During GaN Barrier Growth

Physica Status Solidi (B): Basic Research

Condensed Matter Physics

Magnetic Materials

English

Effect of Threading Defects on InGaN∕GaN Multiple Quantum Well Light Emitting Diodes

Applied Physics Letters

English

Electron Spillover Effects in InGaN∕GaN Quantum-Well Lasers

Journal of Applied Physics

English

Photonic Crystal Effect on Light Emission From InGaN∕GaN Multi-Quantum-Well Structures

Applied Physics Letters

English

InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes

Applied Physics Letters

English

Effect of Growth Interruption on Optical Properties of In-Rich InGaN∕GaN Single Quantum Well Structures

Journal of Applied Physics

English

High Efficiency InGaN/GaN Light Emitting Diodes With Asymmetric Triangular Multiple Quantum Wells

Applied Physics Letters

English