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Publications by Peter. C. Eklund

Silicon Nanowires: Doping Dependent N- And P- Channel Fet Behavior

Materials Research Society Symposium - Proceedings

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

English

Related publications

Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon P-N Junctions

Scientific Reports

Multidisciplinary

English

Bias-Dependent Annealing of Radiation Damage in Neutron-Irradiated Silicon P+-N-N+ Diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

High Energy Physics

Instrumentation

English

Doping Controlled Roughness and Defined Mesoporosity in Chemically Etched Silicon Nanowires With Tunable Conductivity

Journal of Applied Physics

English

Doping Concentration Dependence of the Photoluminescence Spectra of N-Type GaAs Nanowires

Applied Physics Letters

English

Dimensional Effects on the Drain Current of N- And P-Channel Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Doping-Dependent Magnetization Plateaux in P-Merized Hubbard Chains

Physics Letters, Section A: General, Atomic and Solid State Physics

English

Modeling Vibrational Behavior of Silicon Nanowires Using Accelerated Molecular Dynamics Simulations

Scientia Iranica

English

Controllable, Wide‐Ranging N‐Doping and P‐Doping of Monolayer Group 6 Transition‐Metal Disulfides and Diselenides

Advanced Materials

Mechanics of Materials

Materials Science

Mechanical Engineering

English

Studies of Frequency Dependent C-V Characteristics of Neutron Irradiated P/Sup +/-N Silicon Detectors

IEEE Transactions on Nuclear Science

Electronic Engineering

High Energy Physics

English