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Publications by Po-Ching Lin

The Characteristics of Hole Trapping in HfO2∕SiO2 Gate Dielectrics With TiN Gate Electrode

Applied Physics Letters

English

Related publications

Spatial Distributions of Trapping Centers in HfO2∕SiO2 Gate Stacks

Applied Physics Letters

English

Degradation of Polycrystalline HfO2-based Gate Dielectrics Under Nanoscale Electrical Stress

Applied Physics Letters

English

AlN/GaN Insulated Gate HEMTs With HfO2 Gate Dielectric

Electronics Letters

Electronic Engineering

English

Materials Fundamentals of Gate Dielectrics

English

Soft Breakdown of Hafnium Oxynitride Gate Dielectrics

Journal of Applied Physics

English

Characteristics of Al2O3 Gate Dielectrics Partially Fluorinated by a Low Energy Fluorine Beam

Applied Physics Letters

English

Noise in Si and SiGe MOSFETs With High-K Gate Dielectrics

AIP Conference Proceedings

English

In-Plane-Gate Flexible Single-Crystalline Silicon Thin-Film Transistors With High-K Gate Dielectrics on Plastic Substrates

English

Gate-Defined Quantum-Dot Devices Realized in InGaAs/InP by Incorporating a HfO2 Layer as Gate Dielectric

Applied Physics Letters

English