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Publications by R. Armitage

P- And N-Type Doping of Non-Polar A-Plane GaN Grown by Molecular-Beam Epitaxy on R-Plane Sapphire

MRS Internet Journal of Nitride Semiconductor Research
2003English

Related publications

Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy

Journal of Applied Physics
AstronomyPhysics
2019English

MOCVD Growth and Optical Properties of Non-Polar (11–20) A-Plane GaN on (10–12) R-Plane Sapphire Substrate

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2010English

Electronic States of Deep Trap Levels in A-Plane GaN Templates Grown on R-Plane Sapphire by HVPE

Scientific Reports
Multidisciplinary
2018English

Epitaxial Growth of Gallium Nitride Thin Films on A-Plane Sapphire by Molecular Beam Epitaxy

Journal of Applied Physics
AstronomyPhysics
1999English

Strain of M-Plane GaN Epitaxial Layer Grown on Β-LiGaO2 (100) by Plasma-Assisted Molecular Beam Epitaxy

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Deep Centers in N-GaN Grown by Reactive Molecular Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
1998English

Polarity Determination of A-Plane GaN on R-Plane Sapphire and Its Effects on Lateral Overgrowth and Heteroepitaxy

Journal of Applied Physics
AstronomyPhysics
2003English

Morphology, Polarity, and Lateral Molecular Beam Epitaxy Growth of GaN on Sapphire

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1999English

Particular Electrical Quality Ofa-Plane GaN Films Grown Onr-Plane Sapphire by Metal-Organic Chemical Vapor Deposition

Journal of Semiconductors
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
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