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Publications by R. D. Burnham
Integration of a Resonant‐tunneling Structure With a Metal‐semiconductor Field‐effect Transistor
Applied Physics Letters
Astronomy
Physics
Related publications
Tunneling Spectroscopy of Metal-Oxide-Semiconductor Field-Effect Transistor at Low Temperature
Applied Physics Letters
Astronomy
Physics
Single Electron Tunneling Transistor With Tunable Barriers Using Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor
Applied Physics Letters
Astronomy
Physics
Operating Mechanism of the Organic Metal-Semiconductor Field-Effect Transistor (OMESFET)
EPJ Applied Physics
Instrumentation
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Study of Charge Control and Gate Tunneling in a Ferroelectric-Oxide-Silicon Field Effect Transistor: Comparison With a Conventional Metal-Oxide-Silicon Structure
Journal of Applied Physics
Astronomy
Physics
Monolithic Integration of a Very Low Threshold GaInAsP Laser and Metal‐insulator‐semiconductor Field‐effect Transistor on Semi‐insulating InP
Applied Physics Letters
Astronomy
Physics
Metal-Oxide-Semiconductor Field Effect Transistor Humidity Sensor Using Surface Conductance
Applied Physics Letters
Astronomy
Physics
Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
Low Damage Patterning of In0.53Ga0.47As Film for Its Integration as N-Channel in a Fin Metal Oxide Semiconductor Field Effect Transistor Architecture
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
High Mobility In0.53Ga0.47As Quantum-Well Metal Oxide Semiconductor Field Effect Transistor Structures
Journal of Applied Physics
Astronomy
Physics
