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Publications by R. Mickevicius
Simulation of Gate Lag and Current Collapse in Gallium Nitride Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
Related publications
Maximum Current in Nitride-Based Heterostructure Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
Interfacial Gate Resistance in Schottky-Barrier-Gate Field-Effect Transistors
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Modelling of Insulated-Gate Field-Effect Transistors.
Dual-Gate Black Phosphorus Field-Effect Transistors With Hexagonal Boron Nitride as Dielectric and Passivation Layers
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
Research on Microwave Junction Gate Field Effect Transistors.
Electron Beam Interactions With Gallium Arsenide Field Effect Transistors
Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
