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Publications by R. Stoklas

Aluminum Oxide as Passivation and Gate Insulator in GaAs-based Field-Effect Transistors Prepared in Situ by Metal-Organic Vapor Deposition

Applied Physics Letters

English

Origin of Positive Fixed Charge at Insulator/AlGaN Interfaces and Its Control by AlGaN Composition

Applied Physics Letters

English

Related publications

Low Dielectric Constant-Based Organic Field-Effect Transistors and Metal-Insulator-Semiconductor Capacitors

English

Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality

Journal of Applied Physics

English

Metal-Gate/High-Permittivity Dielectric Stack on Gallium Nitride Formed by Silane Surface Passivation and Metal-Organic Chemical Vapor Deposition

English

Remote Coulomb Scattering in Metal–oxide–semiconductor Field Effect Transistors: Screening by Electrons in the Gate

Applied Physics Letters

English

Dual-Gate Organic Field-Effect Transistors as Potentiometric Sensors in Aqueous Solution

Advanced Functional Materials

Materials Science

Condensed Matter Physics

Electrochemistry

Magnetic Materials

English

Deep-Level Emissions in GaAsN∕GaAs Structures Grown by Metal Organic Chemical Vapor Deposition

Journal of Applied Physics

English

Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

Applied Sciences (Switzerland)

Instrumentation

Materials Science

Computer Science Applications

Process Chemistry

Transfer Processes

English

Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

Advanced Electronic Materials

Magnetic Materials

English

Current Transport Mechanisms in GaAs/AlAs Tunnel Structures Grown by Metal–organic Chemical Vapor Deposition

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English