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Publications by Rajaram Bhat

Direct Determination of the Ambipolar Diffusion Length in Strained InxGa1−xAs/InP Quantum Wells by Cathodoluminescence

Applied Physics Letters

English

Related publications

Direct Determination of the Ambipolar Diffusion Length in GaAs/AlGaAs Heterostructures by Cathodoluminescence

Applied Physics Letters

English

Instability of Homogeneous Composition of Highly Strained Quantum Wells in Heterostructures GaAs/InxGa1-xAs/GaAs

Semiconductor Physics, Quantum Electronics and Optoelectronics

Electronic Engineering

Molecular Physics,

Magnetic Materials

English

PL Study on Structure Dependence of GaxIn1-xAs/InP Strained Multi-Quantum Wells Grown by CBE

English

Ambipolar Carrier Diffusion in In0.53Ga0.47As Single Quantum Wells

Brazilian Journal of Physics

English

Dielectric Screening Effects on Electron Transport in Ga0.51In0.49P/InxGa1−xAs/GaAs Quantum Wells

Journal of Applied Physics

English

Annealing of Dilute-Nitride GaAsSbN∕InP Strained Multiple Quantum Wells

Applied Physics Letters

English

Alloying Effects on the Critical Layer Thickness in InxGa1−xAs/InP Heterostructures Analyzed by Raman Scattering

Applied Physics Letters

English

Observation of Local Strain in InxGa1-xAs Quantum Dots by Spherical-Aberration Corrected HRTEM

English

Large Interband Second-Order Susceptibilities in InxGa1−xN/GaN Quantum Wells

Applied Physics Letters

English