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Publications by Richard J. W. Hill

GaAs on Si Epitaxy by Aspect Ratio Trapping: Analysis and Reduction of Defects Propagating Along the Trench Direction

Journal of Applied Physics

English

Related publications

Epitaxial Growth of GaSb and InAs Fins on 300 Mm Si (001) by Aspect Ratio Trapping

Journal of Applied Physics

English

Optical Characterization of Si‐doped InAs1−xSbxgrown on GaAs and GaAs‐coated Si by Molecular‐beam Epitaxy

Journal of Applied Physics

English

Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy

Applied Physics Letters

English

InAs/GaAs Nanostructures Grown on Patterned Si(001) by Molecular Beam Epitaxy

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English

INTERFACIAL DEFECTS IN GaAs/Si AFTER ANNEALING

Le Journal de Physique Colloques

English

Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

English

Effect of Graded-Temperature Arsenic Prelayer on Quality of GaAs on Ge/Si Substrates by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters

English

GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.

English

Effects of Surface States and Si-Interlayer Based Surface Passivation on GaAs Quantum Wires Grown by Selective Molecular Beam Epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English