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Publications by Robert Reedy

Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting

Applied Physics Letters

English

Related publications

Formation of Single Crystal Sulfur Supersaturated Silicon Based Junctions by Pulsed Laser Melting

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

DOPANT INCORPORATION DURING LP-VPE OF GaAs

Le Journal de Physique Colloques

English

Quantum Simulation of the Hubbard Model With Dopant Atoms in Silicon

Nature Communications

Molecular Biology

English

Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers

Journal of Applied Physics

English

Issues Affecting Quantitative Evaluation of Dopant Profiles Using Electron Holography

Microscopy and Microanalysis

Instrumentation

English

Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

Physical Review Letters

English

Dopant Activation and Photoresponses of Boron-Doped Silicon by Self-Assembled Molecular Monolayers

English

Dopant-Vacancy Cluster Formation in Germanium

Journal of Applied Physics

English

Quantification of Shallow-Junction Dopant Loss During CMOS Process

AIP Conference Proceedings

English