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Publications by Ronald D. Schrimpf

Electron Transport Properties of AlxGa1−xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

Physical Review Applied

English

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

IEEE Transactions on Nuclear Science

Electronic Engineering

High Energy Physics

English

Capacitance-Frequency Estimates of Border-Trap Densities in Multi-Fin MOS Capacitors

IEEE Transactions on Nuclear Science

Electronic Engineering

High Energy Physics

English

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