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Publications by S Rubanov
Damage Layers in Si vs. Ion Dose During 30 keV FIB Milling
Microscopy and Microanalysis
Instrumentation
Related publications
Damage Accumulation in Si During High-Dose Self-Ion Implantation
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Damage Nucleation in Si During Ion Irradiation
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Mechanics of Materials
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Condensed Matter Physics
Mechanical Engineering
Cryo-Fib Milling Reveals Complex Vesicular Architecture in Photosynthetic Bacteria
Microscopy and Microanalysis
Instrumentation
Estimation of Temperature Rise During Ion Milling of Samples
Microscopy and Microanalysis
Instrumentation
Cathodoluminescence From BN Buried Layers by High-Dose Ion Implantation
Journal of Applied Physics
Astronomy
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Low Damage Sample Preparation of Semiconductor Materials Using Low Energy Ion Milling
Microscopy and Microanalysis
Instrumentation
FIB Damage in Silicon: Amorphization or Redeposition?
Microscopy and Microanalysis
Instrumentation
Dose Rate Effects During Damage Accumulation in Silicon
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Structural Investigation of keV Ar-Ion-Induced Surface Ripples in Si by Cross-Sectional Transmission Electron Microscopy
Physical Review B
