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Publications by S. Amon

Temperature Dependent Model for Hole Effective Mass in Heavily Doped P-Type SiGe

Le Journal de Physique IV
1996English

Related publications

Easily Doped P-Type, Low Hole Effective Mass, Transparent Oxides

Scientific Reports
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2016English

Temperature Dependence of Electron and Hole Mobilities in Heavily Impurity-Doped SiGe Single Crystals

Journal of Applied Physics
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2005English

Temperature-Dependent Hall Scattering Factor and Drift Mobility in Remotely Doped Si:B/SiGe/Si Heterostructures

Applied Physics Letters
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1999English

Extremely High Room-Temperature Two-Dimensional Hole Gas Mobility in Ge/Si0.33Ge0.67/Si(001)p-Type Modulation-Doped Heterostructures

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P-Type SiGe/Si Superlattice Cooler

Materials Research Society Symposium - Proceedings
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2000English

Below Bulk-Band-Gap Photoluminescence at Room Temperature From Heavily P- And B-Doped Si Nanocrystals

Journal of Applied Physics
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2003English

Temperature Dependent Effective Mass in AlGaN/GaN High Electron Mobility Transistor Structures

Applied Physics Letters
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Superconducting and Normal State Properties of Heavily Hole-Doped Diamond Synthesized at High Pressure

Science and Technology of Advanced Materials
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2006English

Hidden Robust Presence of a Hole Fermi Surface in a Heavily Electron-Doped Iron-Based Superconductor LaFe2As2

Physical Review Research
2019English

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