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Publications by S. J. Sweeney
The Influence of Growth Conditions on Carrier Recombination Mechanisms in 1.3 Μm GaAsSb/GaAs Quantum Well Lasers
Applied Physics Letters
Astronomy
Physics
Recombination Mechanisms and Band Alignment of GaAs1−xBix/GaAs Light Emitting Diodes
Applied Physics Letters
Astronomy
Physics
Temperature Stable Mid-Infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
Scientific Reports
Multidisciplinary
Characterization of 2.3 Μm GaInAsSb-based Vertical-Cavity Surface-Emitting Laser Structures Using Photo-Modulated Reflectance
Journal of Applied Physics
Astronomy
Physics
A Comparative Study of Epitaxial InGaAsBi/InP Structures Using Rutherford Backscattering Spectrometry, X-Ray Diffraction and Photoluminescence Techniques
Journal of Applied Physics
Astronomy
Physics
Unusual Increase of the Auger Recombination Current in 1.3 Μm GaInNAs Quantum-Well Lasers Under High Pressure
Applied Physics Letters
Astronomy
Physics
Experimental Determination of the Band Gap Dependence of Auger Recombination in InGaAs∕InP Multiple Quantum Well Lasers at Room Temperature
Applied Physics Letters
Astronomy
Physics
Radiative and Auger Recombination in 1.3μm InGaAsP and 1.5μm InGaAs Quantum-Well Lasers Measured Under High Pressure at Low and Room Temperatures
Applied Physics Letters
Astronomy
Physics
