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Publications by S. Oosterhoff
Distributions of Boron and Phosphorus Implanted in Silicon in the Energy Range 0.1–1.5 MeV
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy Physics
Instrumentation
Nuclear
Related publications
The Effect of Implantation, Energy, and Dose on Extended Defect Formation for MeV Phosphorus Implanted Silicon
Applied Physics Letters
Astronomy
Physics
In Situanalysis of the Carrier Lifetime in Silicon During Implantation of 1.5 MeV Protons
Lithuanian Journal of Physics
Astronomy
Physics
A Semi-Empirical Hamiltonian for Boron, Phosphorus and Compounds Containing Boron, Phosphorus and Silicon.
Depth Distributions of Low Energy Deuterium Implanted Into Silicon as Determined by SIMS
Angular Distributions and Anisotropy of Fission Fragments From Neutron-Induced Fission in Intermediate Energy Range 1–200 MeV
EPJ Web of Conferences
Astronomy
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Reduction of Thickness Secondary Defects in MeV Ion Implanted Silicon by Intrinsic Gettering
Diffuse X-Ray Streaks From Defects and Surface Features in Boron Implanted Silicon
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Diffusion of Phosphorus and Boron From ALD Oxides Into Silicon
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Raman Spectroscopy and Spreading Resistance Analysis of Phosphorus Implanted and Annealed Silicon
Journal of Applied Physics
Astronomy
Physics
