Discover open access scientific publications

Search, annotate, share and cite publications

Publications by S. P. Denbaars

Large Interband Second-Order Susceptibilities in InxGa1−xN/GaN Quantum Wells

Applied Physics Letters
AstronomyPhysics
1999English

Fabrication and Characterization of GaN Junctionfield Effect Transistors

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
1999English

Related publications

Polarization-Resolved Near-Field Spectroscopy of Localized States in M -Plane InxGa1−xN/GaN Quantum Wells

Physical Review Applied
AstronomyPhysics
2017English

Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1 - xN Quantum Wells

Acta Physica Polonica A
AstronomyPhysics
2011English

Measurement of Second Order Susceptibilities of GaN and AlGaN

Journal of Applied Physics
AstronomyPhysics
2005English

Erratum: “Temperature Dependence of Exciton-Surface Plasmon Polariton Coupling in Ag, Au, and Al Films on InxGa1−xN/GaN Quantum Wells Studied With Time-Resolved Cathodoluminescence” [J. Appl. Phys. 117, 043105 (2015)]

Journal of Applied Physics
AstronomyPhysics
2015English

Measuring Non-Uniformities in GaN/AlN Quantum Wells

Microscopy and Microanalysis
Instrumentation
2003English

Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

MRS Internet Journal of Nitride Semiconductor Research
1999English

Electronic Band Structure of InxGa1-xN Under Pressure

Acta Physica Polonica A
AstronomyPhysics
2007English

Dielectric Screening Effects on Electron Transport in Ga0.51In0.49P/InxGa1−xAs/GaAs Quantum Wells

Journal of Applied Physics
AstronomyPhysics
2000English

Intersubband and Interband Absorptions in Near-Surface Quantum Wells Under Intense Laser Field

2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy