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Publications by S.P. Łepkowski
Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1 - xN Quantum Wells
Acta Physica Polonica A
Astronomy
Physics
Related publications
Phonon-Assisted Exciton Formation and Relaxation in GaAs/AlxGa1−xAs Quantum Wells
Physical Review B
Large Interband Second-Order Susceptibilities in InxGa1−xN/GaN Quantum Wells
Applied Physics Letters
Astronomy
Physics
Hydrostatic Pressure and Built-In Electric Field Effects on the Donor Impurity States in Cylindrical Wurtzite GaN/AlxGa1−xN Quantum Rings
Advances in Condensed Matter Physics
Condensed Matter Physics
Exciton Condensation in Quantum Wells
Low Temperature Physics
Astronomy
Physics
Polarization-Resolved Near-Field Spectroscopy of Localized States in M -Plane InxGa1−xN/GaN Quantum Wells
Physical Review Applied
Astronomy
Physics
Transmission-Mode GaN Photocathode Based on Graded AlxGa1?xN Buffer Layer
Chinese Optics Letters
Electronic Engineering
Optics
Molecular Physics,
Optical
Electrical
Atomic
Magnetic Materials
Electronic
Theory of the Composition Dependence of the Band Offset and Sheet Carrier Density in the GaN/AlxGa1−xN Heterostructure
Journal of Applied Physics
Astronomy
Physics
Erratum: “Temperature Dependence of Exciton-Surface Plasmon Polariton Coupling in Ag, Au, and Al Films on InxGa1−xN/GaN Quantum Wells Studied With Time-Resolved Cathodoluminescence” [J. Appl. Phys. 117, 043105 (2015)]
Journal of Applied Physics
Astronomy
Physics
Exciton Localization and Quantum Efficiency—A Comparative Cathodoluminescence Study of (In,Ga)N/GaN and GaN/(Al,Ga)N Quantum Wells
Journal of Applied Physics
Astronomy
Physics
