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Publications by Sahar Alialy

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, With and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Journal of Nanomedicine & Nanotechnology
2017English

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Electrical Transport Characteristics of Au/N-GaAs Schottky Diodes on N-Ge at Low Temperatures

Solid-State Electronics
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2001English

Breakdown Characteristics of MOVPE Grown Si-Doped GaAs Schottky Diodes

Solid-State Electronics
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
1999English

Ballistic Electron Emission Microscopy Study of PtSi–n-Si(100) Schottky Diodes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1992English

Electrical Transport Properties of Isolated Carbon Nanotube/Si Heterojunction Schottky Diodes

Applied Physics Letters
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2013English

Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/N-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

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Comment on ‘‘Effect of Sub‐band‐gap Illumination on Β‐FeSi2/N‐type Si Diodes Under Reverse Bias’’

Applied Physics Letters
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1993English

Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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2012English

Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel N-MISFETs

2006English

Room Temperature Operation of Epitaxially Grown Si/Si0.5Ge0.5/Si Resonant Interband Tunneling Diodes

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