Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Sandro Solmi
Characterization of MOS Capacitors Fabricated on N-Type 4h-SiC Implanted With Nitrogen at High Dose
Materials Science Forum
Related publications
Microstructural Interpretation of Ni Ohmic Contact on N-Type 4H–SiC
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Characterization and Physical Modeling of MOS Capacitors in Epitaxial Graphene Monolayers and Bilayers on 6h-SiC
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4h-SiC Interface
Acta Physica Polonica A
Astronomy
Physics
Photomixers Fabricated on Nitrogen-Ion-Implanted GaAs
Applied Physics Letters
Astronomy
Physics
Ohmic Contacts on P-Type Al-Implanted 4h-SiC Layers After Different Post-Implantation Annealings
Materials
Materials Science
Condensed Matter Physics
Research of P-I-N Junctions Based on 4h-SiC Fabricated by Low-Temperature Diffusion of Boron
Advances in Materials Science and Engineering
Materials Science
Engineering
Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC
Journal of Applied Physics
Astronomy
Physics
Vertical Conduction Mechanism of the Epitaxial Graphene/N-Type 4h-SiC Heterojunction at Cryogenic Temperatures
Applied Physics Letters
Astronomy
Physics
Characterization of MOS Devices Fabricated on Laser Crystallized Polysilicon.
