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Publications by Shinji NOZAKI
GaAs Pseudo-Heterojunction Bipolar Transistor With a Heavily Carbon-Doped Base
Related publications
InGaP/InGaAsN/GaAs NpN Double-Heterojunction Bipolar Transistor
Applied Physics Letters
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Bandgap Narrowing in Heavily Doped Base Regions of Si/Si1-xGex/Si Heterojunction Bipolar Transistors.
Empirical Modeling of a GaAs/A1GaAs Heterojunction Bipolar Transistor for Microwave Circuit Applications.
Ultra High Speed Heterojunction Bipolar Transistor Technology
Extrinsic Base Regrowth of P-InGaN for NPN-Type GaN/InGaN Heterojunction Bipolar Transistor
Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors With High Current Amplification (Adv. Electron. Mater. 3/2019)
Advanced Electronic Materials
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Submicrometric Heavily Doped N-GaAs Structures for Microwave Detection
Acta Physica Polonica A
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A Stripe-Geometry InGaAsP/InP Heterojunction Bipolar Transistor Suitable for Optical Integration
IEEE Electron Device Letters
Electronic Engineering
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RF Characteristics of GaAs/InGaAsN/GaAs P-N-P Double Heterojunction Bipolar Transistors
