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Publications by Shuichi TAZAWA

Improvement of Turn-Off Characteristics of Semiconductor Power Devices by -10MeV Light Ion Implantation.

RADIOISOTOPES
1994English

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A Study on Improvement of Material Characteristics by Control of Ion Implantation

Journal of the Korean Society of Marine Engineering
2008English

Electronic Characteristics Changes of Semiconductor Devices Caused by Packaging Stress.

Transactions of the Japan Society of Mechanical Engineers Series A
1995English

Progress of Power Semiconductor Devices. 1. State of the Art on Power Semiconductor Device.

Journal of the Institute of Electrical Engineers of Japan
Electronic EngineeringElectrical
1998English

Improvement of Cascaded Semiconductor Optical Amplifier Gates by Using Holding Light Injection

Journal of Lightwave Technology
OpticsAtomicMolecular Physics,
2001English

Turn-Off Electroluminescence Overshoots in Doped Alq Single-Layer Devices

New Physics: Sae Mulli
AstronomyPhysics
2017English

Precise Control of Switching Time Point of Power Semiconductor Devices.

IEEJ Transactions on Power and Energy
Electronic EngineeringPower TechnologyElectricalEnergy Engineering
1986English

Flow Characteristics of Epoxy Compounds for Encapsulation of Semiconductor Devices

Seikei-Kakou
1993English

Comparison of Commercially Pure Titanium Surface Hardness Improvement by Plasma Nitrocarburizing and Ion Implantation

Advanced Materials Research
2013English

Quantitative Examination of Reverse-Biased Semiconductor Devices Using Off- Axis Electron Holography

Microscopy and Microanalysis
Instrumentation
2002English

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