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Publications by T. D. Veal

Intrinsic Point Defects and the N - And P -Type Dopability of the Narrow Gap Semiconductors GaSb and InSb

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2019English

Bi-Induced Band Gap Reduction in Epitaxial InSbBi Alloys

Applied Physics Letters
AstronomyPhysics
2014English

Band Gap Reduction in InNxSb1-x Alloys: Optical Absorption, K · P Modeling, and Density Functional Theory

Applied Physics Letters
AstronomyPhysics
2016English

Sulfur Passivation of Surface Electrons in Highly Mg-Doped InN

Journal of Applied Physics
AstronomyPhysics
2013English

Electron Mobility in CdO Films

Journal of Applied Physics
AstronomyPhysics
2011English

Increased P-Type Conductivity in GaNxSb1−x, Experimental and Theoretical Aspects

Journal of Applied Physics
AstronomyPhysics
2015English

N Incorporation and Associated Localized Vibrational Modes in GaSb

Physical Review B
2014English

The Influence of Sn Doping on the Growth of In2O3 on Y-Stabilized ZrO2(100) by Oxygen Plasma Assisted Molecular Beam Epitaxy

Journal of Applied Physics
AstronomyPhysics
2009English

Surface Electronic Properties of Clean and S-Terminated InSb(001) and (111)B

Journal of Applied Physics
AstronomyPhysics
2008English

Photoluminescence of InNAs Alloys: S-Shaped Temperature Dependence and Conduction-Band Nonparabolicity

Physical Review B
2007English

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