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Publications by T. Hanyu
Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM Using Spin-Transfer-Torque (STT) MTJs
Design of Compact Nonvolatile Lookup-Table Circuit Using Three-Terminal Magnetic-Tunnel-Junction-Based Single-Ended Structure
Related publications
Spintronics Devices Using Spin-Transfer Torque
Physics and High Technology
Efficient Micromagnetic Modelling of Spin-Transfer Torque and Spin-Orbit Torque
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Increasing Static Noise Margin of Single-Bit-Line SRAM by Lowering Bit-Line Voltage During Reading
A Review on Low Power Sram
International Journal of Recent Trends in Engineering and Research
Skutterudite Thermoelectric Modules With High Volume-Power-Density: Scalability and Reproducibility
High Thermal Stability and Low Switching Energy Barrier in Spin-Transfer Torque RAM With Composite Free Layer
Impact of Spin-Orbit Torque on Spin-Transfer Torque Switching in Magnetic Tunnel Junctions
Scientific Reports
Multidisciplinary
Comparative Analysis of Various SRAM Cells With Low Power, High Read Stability and Low Area
International Journal of Engineering and Manufacturing
Low Power and High Speed 13T SRAM Cell With Bit-Interleaving Capability
International Journal of Computer Applications
