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Publications by T. O’Regan
Theory of Hole Mobility in Strained Ge and III-V P-Channel Inversion Layers With High-Κ Insulators
Journal of Applied Physics
Astronomy
Physics
Related publications
Investigation of Strained-Sb Hetrostructures With High Hole Mobility
Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-Κ MOS Devices
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
High Performance, Strained-Ge, Heterostructure P-MOSFETs
Atomic Layer Deposition of High-K Dielectric Layers on Ge and III-V MOS Channels
ECS Meeting Abstracts
Atomic Layer Deposition of High-K Dielectric Layers on Ge and III-V MOS Channels
III-V/Ge Channel Engineering for Future CMOS
Hole Weak Anti-Localization in a Strained-Ge Surface Quantum Well
Applied Physics Letters
Astronomy
Physics
Analytical Model for Phonon-Limited Mobility in N-Mos Inversion Layers on Arbitrarily Oriented and Strained Si Surfaces
High Hole Mobility (≥500 Cm2 V−1 S−1) Polycrystalline Ge Films on GeO2-coated Glass and Plastic Substrates
Applied Physics Express
Engineering
Astronomy
Physics
