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Publications by T. O. Tuomi
Dislocations at the Interface Between Sapphire and GaN
Journal of Materials Science: Materials in Electronics
Electronic Engineering
Biomedical Engineering
Condensed Matter Physics
Biomaterials
Electronic
Molecular Physics,
Biophysics
Optical
Electrical
Atomic
Magnetic Materials
Bioengineering
Optics
Related publications
Degenerate Layer at GaN/sapphire Interface: Influence on Hall-Effect Measurements
Applied Physics Letters
Astronomy
Physics
High Efficiency Light Emitting Diode With Anisotropically Etched GaN-sapphire Interface
Applied Physics Letters
Astronomy
Physics
Role of Oxygen at Screw Dislocations in GaN
Physical Review Letters
Astronomy
Physics
Mobility Limitations Due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure
Journal of Nanomaterials
Materials Science
Nanotechnology
Nanoscience
Phonon Reflection at a Sapphire-Vacuum Interface
Journal of Physics C: Solid State Physics
Oxygen Segregation and Electronic Structure Changes at Dislocations in GaN
Microscopy and Microanalysis
Instrumentation
Screw Dislocations in GaN
Microscopy and Microanalysis
Instrumentation
Microcavity Effects in GaN Epitaxial Films and in Ag/GaN/Sapphire Structures
Applied Physics Letters
Astronomy
Physics
Terahertz Spectroscopy of Thermal Radiation From AlGaN/GaN Heterostructure on Sapphire at Low Temperatures
Applied Sciences (Switzerland)
Instrumentation
Materials Science
Fluid Flow
Engineering
Computer Science Applications
Process Chemistry
Transfer Processes
Technology
