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Publications by Tae Hyung Park

Thickness Effect of Ultra-Thin Ta2O5 Resistance Switching Layer in 28 Nm-Diameter Memory Cell

Scientific Reports
Multidisciplinary
2015English

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Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices

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Resistive Switching in Ultra-Thin La0.7Sr0.3MnO3/SrRuO3 Superlattices

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The Role of Nitrogen Doping in ALD Ta2O5 and Its Influence on Multilevel Cell Switching in RRAM

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Enhanced Light-Induced Transverse Thermoelectric Effect in Tilted BiCuSeO Film via the Ultra-Thin AuNPs Layer

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Effect of Heavy Metal Layer Thickness on Spin-Orbit Torque and Current-Induced Switching in Hf|CoFeB|MgO Structures

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Enhancing Through Thickness Thermal Conductivity of Ultra-Thin Composite Laminates. Final Report

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On the Thickness and Electrical Resistance of Thin Liquid Films.

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Resistive Switching Behavior in Lu2O3 Thin Film for Advanced Flexible Memory Applications

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