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Publications by Takehiko Nomura

Solid-Phase Diffusion of Carbon Into GaN Using SiNx/CNx/GaN Structure

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2007English

Related publications

Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors

Journal of Applied Physics
AstronomyPhysics
2005English

Photoluminescence of Carbon in Situ Doped GaN Grown by Halide Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
1998English

Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures

Journal of Applied Physics
AstronomyPhysics
2003English

Reversible Changes in the Lattice Site Structure for in Implanted Into GaN

Applied Physics Letters
AstronomyPhysics
2002English

Synthesis of GaN Nanorods by a Solid-State Reaction

Journal of Nanomaterials
Materials ScienceNanotechnologyNanoscience
2010English

Optimization of Low Temperature GaN Buffer Layers for Halide Vapor Phase Epitaxy Growth of Bulk GaN

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2013English

Defect Structure of Mg-Doped GaN Nanowires

Microscopy and Microanalysis
Instrumentation
2003English

Preparation of a Smooth GaN–Gallium Solid–liquid Interface

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2016English

Growth and Properties of Intentionally Carbon-Doped GaN Layers

Crystal Research and Technology
Materials ScienceChemistryCondensed Matter Physics
2019English

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