Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Taketomo Sato
Investigation on Optical Absorption Properties of Electrochemically Formed Porous InP Using Photoelectric Conversion Devices
Applied Surface Science
Surfaces
Astronomy
Condensed Matter Physics
Interfaces
Films
Coatings
Chemistry
Physics
Large Photocurrents in GaN Porous Structures With a Redshift of the Photoabsorption Edge
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions
IEEE Transactions on Semiconductor Manufacturing
Electronic Engineering
Industrial
Condensed Matter Physics
Manufacturing Engineering
Optical
Electrical
Magnetic Materials
Electronic
Interface Trap States in Al2O3/AlGaN/GaN Structure Induced by Inductively Coupled Plasma Etching of AlGaN Surfaces
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures
Applied Physics Express
Engineering
Astronomy
Physics
Formation of Thin Native Oxide Layer on N-GaN by Electrochemical Process in Mixed Solution With Glycol and Water
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Effects of Surface States on Control Characteristics of Nano-Meter Scale Schottky Gates Formed on GaAs
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Effects of Surface States and Si-Interlayer Based Surface Passivation on GaAs Quantum Wires Grown by Selective Molecular Beam Epitaxy
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Growth Kinetics and Modeling of Selective Molecular Beam Epitaxial Growth of GaAs Ridge Quantum Wires on Pre-Patterned Nonplanar Substrates
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1
2
›
