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Publications by Tien-Sheng Chao

The Characteristics of N- And P-Channel Poly-Si Thin-Film Transistors With Fully Ni-Salicided S/D and Gate Structure

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2010English

Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si

ECS Journal of Solid State Science and Technology
OpticalElectronicMagnetic Materials
2013English

Related publications

Spatially and Temporally Resolving the Degradation of N-Channel Poly-Si Thin-Film Transistors Under Hot-Carrier Stressing

Journal of Applied Physics
AstronomyPhysics
2007English

Positive Charge Trapping Phenomenon in N-Channel Thin-Film Transistors With Amorphous Alumina Gate Insulators

Journal of Applied Physics
AstronomyPhysics
2016English

Characteristics of Polycrystalline Silicon Thin-Film Transistors With Thin Oxide/Nitride Gate Structures

Optical Engineering
EngineeringOpticsAtomicMolecular Physics,
1993English

The Effects of Channel Doping Concentration for N-Type Junction-Less Double-Gate Poly-Si Nanostrip Transistors

Semiconductor Science and Technology
Electronic EngineeringCondensed Matter PhysicsOpticalMaterials ChemistryElectricalMagnetic MaterialsElectronic
2014English

Poly-Si Thin-Film Transistors Crystallized by Electron-Beam Annealing

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2002English

Dimensional Effects on the Drain Current of N- And P-Channel Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2000English

Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2013English

Operations of Poly-Si Nanowire Thin-Film Transistors With a Multiple-Gated Configuration

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2007English

Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor

Coatings
SurfacesFilmsCoatingsMaterials ChemistryInterfaces
2019English

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