Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Tony Laneve
Empirical Modeling of a GaAs/A1GaAs Heterojunction Bipolar Transistor for Microwave Circuit Applications.
Related publications
InGaP/InGaAsN/GaAs NpN Double-Heterojunction Bipolar Transistor
Applied Physics Letters
Astronomy
Physics
GaAs Pseudo-Heterojunction Bipolar Transistor With a Heavily Carbon-Doped Base
Ultra High Speed Heterojunction Bipolar Transistor Technology
A Stripe-Geometry InGaAsP/InP Heterojunction Bipolar Transistor Suitable for Optical Integration
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Comparison of As- And P-Based Metamorphic Buffers for High Performance InP Heterojunction Bipolar Transistor and High Electron Mobility Transistor Applications
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Three-Terminal Heterojunction Bipolar Transistor Solar Cell for High-Efficiency Photovoltaic Conversion
Nature Communications
Astronomy
Genetics
Molecular Biology
Biochemistry
Chemistry
Physics
RF Characteristics of GaAs/InGaAsN/GaAs P-N-P Double Heterojunction Bipolar Transistors
Gate Recessing Optimization of GaAs/Al0.22Ga0.78As Heterojunction Field Effect Transistor Using Citric Acid/Hydrogen Peroxide/Ammonium Hydroxide for Power Applications
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
An AlGaAs Double‐heterojunction Bipolar Transistor Grown by Molecular‐beam Epitaxy
Applied Physics Letters
Astronomy
Physics