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Publications by Toomas Rang
High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes
Materials Science Forum
Related publications
Evaluation of SiC Schottky Diodes Using Pressure Contacts
IEEE Transactions on Industrial Electronics
Control
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Computer Science Applications
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Characterization of In-Grown Stacking Faults in 4H–SiC (0001) Epitaxial Layers and Its Impacts on High-Voltage Schottky Barrier Diodes
Applied Physics Letters
Astronomy
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Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation
IEEJ Transactions on Industry Applications
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Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes
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Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes
Crystals
Materials Science
Inorganic Chemistry
Chemical Engineering
Condensed Matter Physics
SiC Schottky-Barrier Diodes Formed With TiBx and ZrBx Amorphous Layers
Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic Engineering
Optics
Molecular Physics,
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Electrical
Atomic
Magnetic Materials
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Characterization of Schottky Diodes on 4h-SiC With Various Off-Axis Angles Grown by Sublimation Epitaxy
Materials Science Forum
Modeling of Inhomogeneous 4h-SiC Schottky and JBS Diodes in a Wide Temperature Range
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High Voltage (450 V) GaN Schottky Rectifiers
Applied Physics Letters
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