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Publications by Toshikazu Nishide
Characterization of Sol-Gel-Derived and Crystallized HfO2, ZrO2, ZrO2-Y2O3 Thin Films on Si(001) Wafers With High Dielectric Constant
Related publications
Microwave Characterization of (Pb,La)TiO3 Thin Films Integrated on ZrO2∕SiO2∕Si Wafers by Sol-Gel Techniques
Applied Physics Letters
Astronomy
Physics
Preparation of ZrO2-Y2O3 Thin Films by the Sol-Gel Method
NIPPON KAGAKU KAISHI
Characterization of Thin ZrO2 Films Deposited Using (ZrOi–Pr)2(thd)2 and O2 on Si(100)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Aqueous Solution–gel Preparation of Ultrathin ZrO2 Films for Gate Dielectric Application
Thin Solid Films
Surfaces
Alloys
Optical
Interfaces
Metals
Materials Chemistry
Magnetic Materials
Films
Coatings
Electronic
Self-Organized ZrO2 Dendrites by Sol-Gel Process
Microscopy and Microanalysis
Instrumentation
Electron Microscopy of Thin-Film Y2o3-Stabilized ZrO2 and CeO2 on MgO
Microscopy and Microanalysis
Instrumentation
Interdiffusion Studies on High-Tc Superconducting YBa2Cu3O7−δ Thin Films on Si(111) With a NiSi2/ZrO2 Buffer Layer
Applied Surface Science
Surfaces
Astronomy
Condensed Matter Physics
Interfaces
Films
Coatings
Chemistry
Physics
Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process
Nanomaterials
Materials Science
Chemical Engineering
Interfacial Compound Suppression and Dielectric Properties Enhancement of F–N Codoped ZrO2 Thin Films
Applied Physics Letters
Astronomy
Physics