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Publications by Tse-Ming Ding
Influences of Top Electrode Reduction Potential and Operation Ambient on the Switching Characteristics of Tantalum Oxide Resistive Switching Memories
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
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Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories
IFIP Advances in Information and Communication Technology
Computer Networks
Information Systems
Management
Communications
TaOx-based Resistive Switching Memories: Prospective and Challenges
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Comparison of Resistive Switching Characteristics Using Copper and Aluminum Electrodes on GeOx/W Cross-Point Memories
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Resistive Switching Characteristics of a SiOxLayer With CF4Plasma Treatment
Journal of Nanomaterials
Materials Science
Nanotechnology
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Resistive Switching Near Electrode Interfaces: Estimations by a Current Model
Journal of Applied Physics
Astronomy
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Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
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Electronic
Surface Effects of Electrode-Dependent Switching Behavior of Resistive Random-Access Memory
Applied Physics Letters
Astronomy
Physics
Self-Consistent Physical Modeling of Set/Reset Operations in Unipolar Resistive-Switching Memories
Applied Physics Letters
Astronomy
Physics
Anomalous Resistive Switching Phenomenon
Journal of Applied Physics
Astronomy
Physics
