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Publications by Tzu-Liang Chan
Limits on Passivating Defects in Semiconductors: The Case of Si Edge Dislocations
Physical Review Letters
Astronomy
Physics
Theoretical Studies of Pb on Si(111) and Si(100), Global Search for H-Passivated Si Nanowires, and Construction of Highly Localized Quasiatomic Minimal Basis Orbitals for Mo
Related publications
Dislocations in Semiconductors
Le Journal de Physique Colloques
Cathodoluminescence Studies of Dislocations in Semiconductors
Le Journal de Physique Colloques
Recent Results on the Structure of Dislocations in Tetrahedrally Coordinated Semiconductors
Le Journal de Physique Colloques
Interaction of Cavities and Dislocations in Semiconductors
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Influence of the Electric Field on Edge Dislocations in Smectics
Journal de Physique II
Microscopy of Defects in Semiconductors
Edge Dislocations in Copolymer Lamellar Films
Journal de Physique II
Hydrogen Interaction With Dislocations in Si
Physical Review Letters
Astronomy
Physics
Erratum To: Modeling Defects and Plasticity in MgSiO3 Post-Perovskite: Part 3—Screw and Edge [001] Dislocations
Physics and Chemistry of Minerals
Petrology
Materials Science
Geochemistry