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Publications by Tzu-Liang Chan

Limits on Passivating Defects in Semiconductors: The Case of Si Edge Dislocations

Physical Review Letters
AstronomyPhysics
2011English

Theoretical Studies of Pb on Si(111) and Si(100), Global Search for H-Passivated Si Nanowires, and Construction of Highly Localized Quasiatomic Minimal Basis Orbitals for Mo

English

Related publications

Dislocations in Semiconductors

Le Journal de Physique Colloques
1966English

Cathodoluminescence Studies of Dislocations in Semiconductors

Le Journal de Physique Colloques
1983English

Recent Results on the Structure of Dislocations in Tetrahedrally Coordinated Semiconductors

Le Journal de Physique Colloques
1979English

Interaction of Cavities and Dislocations in Semiconductors

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
1996English

Influence of the Electric Field on Edge Dislocations in Smectics

Journal de Physique II
1995English

Microscopy of Defects in Semiconductors

2019English

Edge Dislocations in Copolymer Lamellar Films

Journal de Physique II
1994English

Hydrogen Interaction With Dislocations in Si

Physical Review Letters
AstronomyPhysics
2000English

Erratum To: Modeling Defects and Plasticity in MgSiO3 Post-Perovskite: Part 3—Screw and Edge [001] Dislocations

Physics and Chemistry of Minerals
PetrologyMaterials ScienceGeochemistry
2017English

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