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Publications by V. D. Wheeler

Vertical Conduction Mechanism of the Epitaxial Graphene/N-Type 4h-SiC Heterojunction at Cryogenic Temperatures

Applied Physics Letters
AstronomyPhysics
2012English

Related publications

Microscopic Raman Mapping of Epitaxial Graphene on 4h-SiC(0001)

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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2012English

First-Principles Calculation Study of Epitaxial Graphene Layer on 4h-SiC (0001) Surface

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2016English

Epitaxial Growth of Graphene on SiC Surfaces

Hyomen Kagaku
2011English

Microstructural Interpretation of Ni Ohmic Contact on N-Type 4H–SiC

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2002English

Deep Levels in Iron Doped N- And P-Type 4h-SiC

Journal of Applied Physics
AstronomyPhysics
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Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC

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Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Crystals
Materials ScienceInorganic ChemistryChemical EngineeringCondensed Matter Physics
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Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC

Journal of Applied Physics
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Suppression of Rotational Twins in Epitaxial B12P2 on 4h-SiC

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