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Publications by W. Burkhardt
P- And N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
MRS Internet Journal of Nitride Semiconductor Research
Related publications
Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy
Journal of Applied Physics
Astronomy
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P- And N-Type Doping of Non-Polar A-Plane GaN Grown by Molecular-Beam Epitaxy on R-Plane Sapphire
MRS Internet Journal of Nitride Semiconductor Research
Properties of GaN Epilayers Grown on Misoriented Sapphire Substrates
MRS Internet Journal of Nitride Semiconductor Research
Native Deep-Level Defects in MBE-Grown P-Type CdTe
Acta Physica Polonica A
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Room Temperature Ferromagnetism in Cubic GaN Epilayers Implanted With Mn+ Ions
Applied Physics Letters
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Avalanche Multiplication Noise in GaN P‐n Junctions Grown on Native GaN Substrates
Physica Status Solidi (B): Basic Research
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Condensed Matter Physics
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Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
Materials
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Condensed Matter Physics
Doping Concentration Dependence of the Photoluminescence Spectra of N-Type GaAs Nanowires
Applied Physics Letters
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Temperature Dependence Studies of Er Optical Centers in GaN Epilayers Grown by MOCVD
MRS Advances