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Publications by W. D. Zhang
The Role of Nitrogen Doping in ALD Ta2O5 and Its Influence on Multilevel Cell Switching in RRAM
Applied Physics Letters
Astronomy
Physics
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Influence of Ta2O5 Doping on Mechanical and Biological Properties of Silicate Glass-Ceramics
Materials Science-Poland
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Nonvolatile Memory: Ultrafast Multilevel Switching in Au/Yig/N-Si RRAM (Adv. Electron. Mater. 2/2019)
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
Dual-Mode Bipolar Resistance Switching in the HfO2 RRAM Device
Thickness Effect of Ultra-Thin Ta2O5 Resistance Switching Layer in 28 Nm-Diameter Memory Cell
Scientific Reports
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Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
IEEE Electron Device Letters
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Influence of PE-ALD of GaP on the Silicon Wafers Quality
Physica Status Solidi (A) Applications and Materials Science
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Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Effect of Doping on Polarization Profiles and Switching in Semiconducting Ferroelectric Thin Films
Journal of Applied Physics
Astronomy
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Boron and Nitrogen Doping in Graphene Antidot Lattices
Physical Review B
Optical
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Condensed Matter Physics
Magnetic Materials
Tuning the Magnetic Properties of Carbon by Nitrogen Doping of Its Graphene Domains
Journal of the American Chemical Society
Biochemistry
Colloid
Catalysis
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