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Publications by W. Pfeiffer
Annealing of Cd‐implanted GaAs: Defect Removal, Lattice Site Occupation, and Electrical Activation
Journal of Applied Physics
Astronomy
Physics
Related publications
Annealing Behavior and Lattice Site Location of Er Implanted InGaN
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy Physics
Instrumentation
Nuclear
Defects Annealing of Si+ Implanted GaAs at RT and 100°C
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Electrical Activation of Nitrogen Heavily Implanted 3c-SiC(100)
Applied Surface Science
Surfaces
Astronomy
Condensed Matter Physics
Interfaces
Films
Coatings
Chemistry
Physics
Defect Density and Electrical Properties of Vacuum Evaporated Copper Films for Annealing Studies of Electrical Resistance
Microelectronics Journal
Activation Analysis of Rapid Thermally Annealed Si and Mg Implanted Semi-Insulating GaAs
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Defect Density and Electrical Properties of Vacuum Evaporated Copper Films From Annealing Studies of Electrical Resistance
ElectroComponent Science and Technology
Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures > 1,100 C
Annealing Condition Optimization and Electrical Characterization of Amorphous LaAlO3∕GaAs Metal-Oxide-Semiconductor Capacitors
Applied Physics Letters
Astronomy
Physics
Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
