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Publications by Wen-Hsi Lee
Effect of Annealing Conditions on Dopants Activation and Stress Conservation in Silicon-Germanium
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Related publications
Effect of Germanium Doping on the Annealing Characteristics of Oxygen and Carbon-Related Defects in Czochralski Silicon
Journal of Applied Physics
Astronomy
Physics
Investigation of Spin-On Dopants and Curing Temperature Effect on Dopant Activation
Applied Physics Research
Substrate Diode Effect on the Performance of Silicon Germanium Phototransistors
Effects of Silicon and Germanium Adsorbed on Graphene
Applied Physics Letters
Astronomy
Physics
Profiling N-Type Dopants in Silicon
Materials Transactions
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and in Situ Dopant Activation
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Silicon Diffusion Engineering in Rapid Melt Growth of Silicon-Germanium on Insulator
ECS Transactions
Engineering
Transport Properties of Nanocrystalline Silicon and Silicon–germanium
Journal of Non-Crystalline Solids
Condensed Matter Physics
Materials Chemistry
Optical
Magnetic Materials
Composites
Electronic
Ceramics
On the Magnetic Field Annealing Effect of Commercial Silicon Steel Sheets
Transactions of the Japan Institute of Metals
