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Publications by William G. Perry

Raman Analysis of the Configurational Disorder in AlxGa1−xN Films

Applied Physics Letters

English

Related publications

Photoluminescence Properties of in Situ Tm-Doped AlxGa1−xN

Applied Physics Letters

English

First-Principles Investigation of Structural and Electronic Properties of the BxGa1-xN, BxAl1-xN, AlxGa1-xN and BxAlyGa1-x-yN Compounds

Acta Physica Polonica A

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Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers

MRS Internet Journal of Nitride Semiconductor Research

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Local Structures of Free-Standing AlxGa1−xN Thin Films Studied by Extended X-Ray Absorption Fine Structure

Applied Physics Letters

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Critical Parameters for the Presence of a 2DEG in GaN/AlxGa1−xN Heterostructures

English

Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1 - xN Quantum Wells

Acta Physica Polonica A

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AlxGa1−xN-based Avalanche Photodiodes With High Reproducible Avalanche Gain

Applied Physics Letters

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Transmission-Mode GaN Photocathode Based on Graded AlxGa1?xN Buffer Layer

Chinese Optics Letters

Electronic Engineering

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Magnetic Materials

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Transition Energies and Direct-Indirect Band Gap Crossing in Zinc-Blende AlxGa1−xN

Physical Review B

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