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Publications by Y. Estrin
Erratum: “Temperature Dependence of Exciton-Surface Plasmon Polariton Coupling in Ag, Au, and Al Films on InxGa1−xN/GaN Quantum Wells Studied With Time-Resolved Cathodoluminescence” [J. Appl. Phys. 117, 043105 (2015)]
Journal of Applied Physics
Astronomy
Physics
Strain Nonuniformities and Plastic Instabilities
Revue de Physique Appliquée
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Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1 - xN Quantum Wells
Acta Physica Polonica A
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Polarization-Resolved Near-Field Spectroscopy of Localized States in M -Plane InxGa1−xN/GaN Quantum Wells
Physical Review Applied
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Large Interband Second-Order Susceptibilities in InxGa1−xN/GaN Quantum Wells
Applied Physics Letters
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Erratum: “Phase Transitions and Octahedral Rotations in Epitaxial Ag(TaxNb1−x)O3 Thin Films Under Tensile Strain” [J. Appl. Phys. 117, 085309 (2015)]
Journal of Applied Physics
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Exciton Localization and Quantum Efficiency—A Comparative Cathodoluminescence Study of (In,Ga)N/GaN and GaN/(Al,Ga)N Quantum Wells
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Luminescence Properties of ZnO Twin Nanorod-Ag Heteronanocrystals and Interfacial Exciton-Surface Plasmon Coupling (Phys. Status Solidi RRL 2/2018)
Physica Status Solidi - Rapid Research Letters
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Photo- And Cathodoluminescence Investigations of Piezoelectric GaN/AlGaN Quantum Wells
Materials Research Society Symposium - Proceedings
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Mechanical Engineering
Response to “Comment on ‘Three-Dimensional Atom Probe Studies of an InxGa1−xN∕GaN Multiple Quantum Well Structure: Assessment of Possible Indium Clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]
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Electroabsorption Modulators Based on Bulk GaN Films and GaN/AlGaN Multiple Quantum Wells
Journal of Applied Physics
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