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Publications by Y. Galvão Gobato

Strain and Localization Effects in InGaAs(N) Quantum Wells: Tuning the Magnetic Response

Journal of Applied Physics
AstronomyPhysics
2014English

Kinetics of Excitonic Complexes on Tunneling Devices

Physical Review B
2005English

Related publications

Strain-Inducedg-Factor Tuning in Single InGaAs/GaAs Quantum Dots

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2016English

Effects of Pulsed Anodic Oxide on the Intermixing in InGaAs/GaAs and InGaAs/AlGaAs Quantum Wells

Journal of Applied Physics
AstronomyPhysics
2003English

Exciton Localization by Potential Fluctuations at the Interface of InGaAs/GaAs Quantum Wells

Physical Review B
1996English

Segregation in InGaAs/GaAs Quantum Wells: MOCVD Versus MBE

Microscopy and Microanalysis
Instrumentation
2003English

Per‐carrier Nonlinear Optical Response of [111]‐oriented Piezoelectric InGaAs/GaAs Multiple Quantum Wells

Journal of Applied Physics
AstronomyPhysics
1996English

Exciton Saturation and Field Screening in InGaAs/InGaAsP Multiple Quantum Wells

Le Journal de Physique IV
1993English

Ultrafast Carrier Dynamics of InGaAsN and InGaAs Single Quantum Wells

Journal of Physics D: Applied Physics
SurfacesUltrasonicsCondensed Matter PhysicsAcousticsOpticalMagnetic MaterialsFilmsCoatingsElectronic
2008English

Ultrawide Strain-Tuning of Light Emission From InGaAs Nanomembranes

Applied Physics Letters
AstronomyPhysics
2018English

Exciton Localization and Quantum Efficiency—A Comparative Cathodoluminescence Study of (In,Ga)N/GaN and GaN/(Al,Ga)N Quantum Wells

Journal of Applied Physics
AstronomyPhysics
2003English

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