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Publications by Y. Lassailly
Evidence of Nanoscale Anderson Localization Induced by Intrinsic Compositional Disorder in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Spectroscopy
Physical Review B
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Electron Spectroscopy Study of the Heavy Fermion Compound U/Sub 2/Zn/Sub 17/
Related publications
Temperature-Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Dependence of Carrier Localization in InGaN∕GaN Multiple-Quantum Wells on Well Thickness
Applied Physics Letters
Astronomy
Physics
Band Structure of Interdiffused InGaN/GaN Quantum Wells
Real-Space Investigation of Intermolecular Energy Transfer by Scanning Tunneling Luminescence Spectroscopy
Hyomen Kagaku
Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy
Applied Physics Letters
Astronomy
Physics
Observation of in Concentration Variations in InGaN∕GaN Quantum-Well Heterostructures by Scanning Capacitance Microscopy
Applied Physics Letters
Astronomy
Physics
Comparison of Electrostatic and Localized Plasmon Induced Light Enhancement in Hybrid InGaN/GaN Quantum Wells
Applied Physics Letters
Astronomy
Physics
Calculation of Electric Field and Optical Transitions in InGaN∕GaN Quantum Wells
Journal of Applied Physics
Astronomy
Physics
Semipolar {Nn¯01} InGaN/GaN Ridge Quantum Wells (N = 1−3) Fabricated by a Regrowth Technique
Applied Physics Letters
Astronomy
Physics