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Publications by Yasuhide Ohno
Floating-Gated Memory Based on Carbon Nanotube Field-Effect Transistors With Si Floating Dots
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Related publications
A Review on Carbon Nanotube Field Effect Transistors
Novel Structures for Carbon Nanotube Field Effect Transistors
International Journal of Modern Physics B
Nonlinear Physics
Condensed Matter Physics
Statistical
Carbon Nanotube Network Ambipolar Field-Effect Transistors With 108On/Off Ratio
Advanced Materials
Mechanics of Materials
Materials Science
Nanotechnology
Mechanical Engineering
Nanoscience
Study of Carbon NanoTube Field Effect Transistors for NEMS
Electric Double Layer Gate Field-Effect Transistors Based on Si
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
The Role of Carbon Precursor on Carbon Nanotube Chirality in Floating Catalyst Chemical Vapour Deposition
Nanoscale
Materials Science
Nanotechnology
Nanoscience
Parallel Arrays of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Nonvolatile Field Effect Transistors Based on Protons and Si/SiO{sub 2}Si Structures
Quasi-Ballistic Carbon Nanotube Array Transistors With Current Density Exceeding Si and GaAs
Science advances
Multidisciplinary