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Publications by Yasuto Hijikata

A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon

Applied Physics Express

English

Characterization of MOS Capacitors Fabricated on N-Type 4h-SiC Implanted With Nitrogen at High Dose

Materials Science Forum

English

Related publications

Oxidation of Silicon: Further Tests for the Interfacial Silicon Emission Model

Journal of Applied Physics

English

Carbon Stars and Silicon Carbide

English

New Catalysts Based on Silicon Carbide Support for Improvements in the Sulfur Recovery. Silicon Carbide as Support for the Selective H2S Oxidation

Journal of the Brazilian Chemical Society

English

Multifractal Characterization of Epitaxial Silicon Carbide on Silicon

Materials Science-Poland

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

English

The Coverings From Silicon Carbide Received by Pyrolysis of Monomethylsilane on the Reactionary and Connected Carbide of Silicon

Informacionno-technologicheskij vestnik

English

Silicon Carbide Photonics

English

The EFFECT OF OXIDATION, THERMAL CYCLING, AND IRRADIATION ON SILICON CARBIDE (SiC) COATED GRAPHITE

English

Effects of Mixing Ratio of Silicon Carbide Particles on the Etch Characteristics of Reaction-Bonded Silicon Carbide

Journal of the Korean Ceramic Society

English

Silicon Carbide LED

Semiconductor Physics, Quantum Electronics and Optoelectronics

Electronic Engineering

Molecular Physics,

Magnetic Materials

English