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Publications by Yee-Chia Yeo

Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality

Journal of Applied Physics
AstronomyPhysics
2016English

Molybdenum Gate Electrode Technology for Deep Sub-Micron CMOS Generations

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2001English

Related publications

Effects of Gate-Last and Gate-First Process on Deep Submicron Inversion-Mode InGaAs N-Channel Metal-Oxide-Semiconductor Field Effect Transistors

Journal of Applied Physics
AstronomyPhysics
2011English

Physical Investigation of Gate Capacitance in In0.53Ga0.47As/In0.52Al0.48As Quantum-Well Metal-Oxide-Semiconductor Field-Effect-Transistors

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric

Journal of Applied Physics
AstronomyPhysics
2006English

Complementary Metal Oxide Semiconductor Image Sensor Using a Gate/Body-Tied P-Channel Metal Oxide Semiconductor Field Effect Transistor-Type Photodetector for High-Speed Binary Operation

Sensors and Materials
Materials ScienceInstrumentation
2018English

Remote Coulomb Scattering in Metal–oxide–semiconductor Field Effect Transistors: Screening by Electrons in the Gate

Applied Physics Letters
AstronomyPhysics
2003English

Highly Doped Thin-Channel GaN-metal–semiconductor Field-Effect Transistors

Applied Physics Letters
AstronomyPhysics
2001English

The Temperature Dependence of the Electron Mobility Degradation Mechanisms in N-Channel Metal-Oxide-Semiconductor Field Effect Transistors With ZrO2 and Sm2O3 Gate Dielectrics

Applied Physics Letters
AstronomyPhysics
2007English

Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors

Journal of Applied Physics
AstronomyPhysics
2005English

Aluminum Oxide as Passivation and Gate Insulator in GaAs-based Field-Effect Transistors Prepared in Situ by Metal-Organic Vapor Deposition

Applied Physics Letters
AstronomyPhysics
2012English

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